Hostname: page-component-848d4c4894-nr4z6 Total loading time: 0 Render date: 2024-05-15T15:13:49.353Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystal Quality and Surface Morphology Improvement of Movpe-Grown GaAs-on-Si Using Tertiarybutylarsine

Published online by Cambridge University Press:  25 February 2011

S. MIYAGAKI ,
S. Ohkubo ,
K. Takai ,
N. Takagi ,
M. Kimura ,
Y. Kikuchi ,
T. Eshita  and
K. Takasaki
S. MIYAGAKI
Affiliation:
FUJITSU LIMITED, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan.
S. Ohkubo
Affiliation:
FUJITSU LIMITED, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan.
K. Takai
Affiliation:
FUJITSU LIMITED, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan.
N. Takagi
Affiliation:
FUJITSU LIMITED, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan.
M. Kimura
Affiliation:
FUJITSU LIMITED, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan.
Y. Kikuchi
Affiliation:
FUJITSU LIMITED, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan.
T. Eshita
Affiliation:
FUJITSU LIMITED, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan.
K. Takasaki
Affiliation:
FUJITSU LIMITED, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan.
Get access

Abstract

We developed GaAs heteroepitaxy on a Si substrate by metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylarsine (TBAs). In buffer layer growth at 450°C, the surface morphology and crystal quality of TBAs-grown films were slightly inferior to those of AsH3-grown films. At buffer layer growth below 400°C, the quality of TBAs-grown films improved. The GaAs films we grew using TBAs had a better quality than those grown using AsH2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 345
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Stringfellow, G. B., J. Electron. Mater. 17, 327 (1988).Google Scholar
2. Haacke, G., Watkins, S. P., and Burkhard, H., J. Cryst. Growth 107, 342 (1991).Google Scholar
3. Miyagaki, S., Ohkubo, S., Takai, K., Takagi, N., Kimura, M., Kikuchi, Y., Eshita, T., and Takasaki, K., presented at the 1992 MRS Spring Meeting, San Francisco, CA, 1992 (to be published).Google Scholar
4. Akiyama, M., Kawarada, Y., and Kaminishi, K., J. Cryst. Growth 68, 21 (1984).Google Scholar
5. Lee, P. W., Omstead, T. R., McKenna, D. R., and Jensen, K. F., J. Cryst. Growth 93, 134 (1988).Google Scholar