The microstructure, defect structure and thermoelectric properties of Al-containing ReSi1.75 based silicides have been investigated. All the Al-containing alloys investigated contain four differently oriented domains accompanied by the twinned microstructure, as the binary alloy does. However, thin defect layers containing a kind of shear structure are locally and sporadically formed at some of twin boundaries. In the defect layer, shear occurs by the vector of  on either (1 09) or (107) planes. Binary ReSi1.75 exhibits nice thermoelectric properties as exemplified by the high value of dimensionless figure of merit (ZT) of 0.70 at 800 °C when measured along , although the ZT value along  is just moderately high. Al-containing Re silicides considerably increase the ZT value along  so that the maximum value of 0.95 is achieved at 150 °C for the ReSi1.75Al0.02 alloy. The temperature dependence of electrical resistivity changes from of semiconductor for the binary alloy to of metal for the Al-added alloys and the value of electrical resistivity is significantly reduced when compared to the binary counterpart.
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