The crystal structure of the defect disilicide formed with Re (ReSi1.75) has been refined by transmission electron microscopy combined with first-principles calculation. The crystal structure is monoclinic with the space group Cm (mc44) due to an ordered arrangement of vacancies on Si sites in the underlying (parent) C11b lattice. The thermoelectric properties of ReSi1.75 are highly anisotropic. Its electrical conduction is of n-type when measure along  while it is of p-type when measured along . Although the value of Seebeck coefficient along  is moderately high (150–200 μV/K), it is very high along  (250–300 μV/K). As a result, a very high value of dimensionless figure of merit (ZT) of 0.7 is achieved at 1073 K when measured along .
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