Skip to main content
    • Aa
    • Aa

Damage and Dopant Profiles Produced by Ultra-Shallow Boron And Arsenic Ion Implants into Silicon at Different Temperatures Characterised by Medium Energy Ion Scattering.

  • J. A. van den Berg (a1), D. G. Armour (a1), S. Zhang, S. Whelan (a1), M. Werner (a1), E. H. J. Collart (a2), R. D. Goldberg (a2), P. Bailey (a3) and T. C. Q. Noakes (a3)...

Medium energy ion scattering (MEIS), operated at sub-nm depth resolution in the double alignment configuration, has been used to examine implant and damage depth profiles formed in Si(100) substrates irradiated with 2.5 keV As+ and 1 keV B+ ions. Samples were implanted at temperatures varying between 150°C, and 300°C to doses ranging from 3X1014 to 2X1016 cm-2. For the As implants the MEIS studies demonstrate the occurrence of effects such as a dopant accommodation linked to the growth in depth of the damage layer, dopant clustering, as well as damage and dopant movement upon annealing. Following epitaxial regrowth at 600°C, approximately half of the As was observed to be in substitutional sites, consistent with the reported formation of AsnV complexes (n≤4), while the remainder became segregated and became trapped within a narrow, 1.1 nm wide layer at the Si/oxide interface

MEIS measurements of the B implants indicate the formation of two distinct damage regions each with a different dependence on implant dose, the importance of dynamic annealing for implants at room temperature and above, and a competing point defect trapping effect at the Si/oxide interface. B+ implantation at low temperature resulted in the formation of an amorphous layer due to the drastic reduction of dynamic annealing processes.

Notably different dopant distributions were measured by SIMS in the samples implanted with As at different temperatures following rapid thermal annealing (RTA) up to 1100°C in an oxidising environment. Implant temperature dependent interactions between defects and dopants are reflected in the transient enhanced diffusion (TED) behaviour of As.

Linked references
Hide All

This list contains references from the content that can be linked to their source. For a full set of references and notes please see the PDF or HTML where available.

1. P. Stolk , H. J. Gossman , D. J. Eaglesham , D. C. Jacobson , C. S. Rafferty , G. H. Gilmer , M. Jareiz , J. M. Poate , H. S. Luftman and T. E. Hayes , J. Appl. Phys 81, 6031 (1997) and refs.

2. N. E. B. Cowern and C. S. Rafferty , MRS Bulletin 25, 39 (2000).

5. R. D. Goldberg , D. G. Armour , J. A. van den Berg , N. Knorr , H. Ohno , S. Whelan , S. Zhang , C. E. A. Cook and M. A. Foad , Rev. Sci. Instr. 71 (2), p. 1032, (2000).

7. J. P. Biersack , and L. G. Haggmark , Nucl. Instr. and Meth. 174, 257 (1980).

8. R. Badheka , M. Wadsworth , D. G. Armour , J. A. van den Berg , and J. B. Clegg . Surface. Interf. Anal. 15, 550 (1990).

11. P. M. Rousseau , P. B. Griffin , W. T. Fang and J. D. Plummer , J. Appl. Phys. 84, 3593 (1998).

Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *


Full text views

Total number of HTML views: 0
Total number of PDF views: 2 *
Loading metrics...

Abstract views

Total abstract views: 26 *
Loading metrics...

* Views captured on Cambridge Core between September 2016 - 19th September 2017. This data will be updated every 24 hours.