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A Damage Model for Disordered Structures in Ion IrradiatedSilicon

Published online by Cambridge University Press:  17 March 2011

Ju-Yin Cheng  and
J. Murray Gibson
Ju-Yin Cheng
Affiliation:
Department of Materials Science and Engineering, University of Illinois, 104 S. Goodwin Avenue, Urbana, IL 61801, U.S.A
J. Murray Gibson
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, U.S.A
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Abstract

Medium-range order has been observed in ion-implanted amorphous silicon,suggesting a paracrystalline structure for this material. The origin of aparacrystalline structure may be due to an energy spike phenomenon. Toevaluate the influence of energy spikes on a particular process, we haveattempted to calculate the characteristic energy in a spike. However, theobserved depth dependence of amorphous structures in as-implanted silicon ispuzzling. To explain this, we simulated the depth distribution of cascadeevents in a particular energy range. We found a great increase of pointdefect concentration and cascade events as the depth increases. This resultcould explain the experimental depth dependence.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O14.1/R9.1
Copyright
Copyright © Materials Research Society 2001

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