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Deep Level Defects in CdTe
Published online by Cambridge University Press: 25 February 2011
Abstract
We have used two complementary techniques to study deep trapping levels in CdTe single crystals. Samples of undoped, semi-insulating material and p-type material doped with phosphorus or cesium have been examined using transient spectroscopic techniques. Both capacitance transients (DLTS) and photocurrent transients (PITS) have been measured. The DLTS measurements showed several trapping levels in all of the specimens, while the PITS data usually revealed only a single level.
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- Copyright © Materials Research Society 1987
References
REFERENCES
[4]
Yokota, K., Katayama, S., and Yoshikawa, T., Jpn. J. Appl. Phys.
21, 465 (1982).CrossRefGoogle Scholar
[6]
Ivamura, Y., Yamamori, S., Negishi, H., and Moriyama, M., Jpn. J. Appl. Phys.
24, 361 (1985).CrossRefGoogle Scholar
[7]
Hurtes, C., Boulou, M., Mitonneau, A., and Bois, D., Appl. Phys. Lett.
32, 821 (1978).CrossRefGoogle Scholar
[10]
Kremer, R. E., Abele, J. C., and Arikan, M. C., in Semi-Insulating III-V Materials: Kah-nee-ta 1984, edited by Look, D. C. and Blakemore, J. S. (Shiva Publishing, Nantwich UK, 1984), p. 480.Google Scholar
[12]
Leigh, W. B., Blakemore, J. S., and Koyama, R. Y., IEEE Trans. Elec. Dev. ED-32, 1835 (1985).CrossRefGoogle Scholar
[14]
Mandal, G., Morehead, F. F., and Wagner, P. R., Ph-ys. Rev.
136, 826 (1964).CrossRefGoogle Scholar
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