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Deep Level Luminescence in InP: Phonon Feature Analysis

Published online by Cambridge University Press:  25 February 2011

S. Banerjee ,
A.K. Srivastava  and
B.M. Arora
S. Banerjee
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
A.K. Srivastava
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
B.M. Arora
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
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Abstract

The phonon features in the deep level luminescence (PL) bands related to Fe and Mn and native defects in InP have been clearly identified and the lineshape of the bands are analysed using configuration coordinate model. A consistent set of phonon parameters are determined for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 185
Copyright
Copyright © Materials Research Society 1990

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References

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