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Deep Level Luminescence Measurements of MBE CdTe Growth Quality and Processing
Published online by Cambridge University Press: 21 February 2011
Abstract
We used photoluminescence spectroscopy to monitor CdTe in-situ during surface processing in order to optimize the surface electronic quality. Spectra of optimally-prepared (100) films grown by molecular beam epitaxy reveal low intensity emission from deep states relative to typical bulk-grown material.
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- Copyright © Materials Research Society 1990