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Deep Level Spectra of Ion-Implantation Defects and Slip Dislocations Introduced by CO2 Laser

Published online by Cambridge University Press:  26 February 2011

X. M. Bao ,
X. Y. Zhang ,
C. E. Liu  and
X. Q. Zheng
X. M. Bao
Affiliation:
Department of Physics, Nanjing University, Nanjing, China
X. Y. Zhang
Affiliation:
Department of Physics, Nanjing University, Nanjing, China
C. E. Liu
Affiliation:
Department of Physics, Nanjing University, Nanjing, China
X. Q. Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing, China
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Abstract

The CW CO2 laser annealing is an effective method for removing deep level defects induced by ion-implantation. The available laser density range is 350˜600 W/cm2, which is consistent with that needed to fully activate implanted impurities. At high power density (>600W/cm2 ) slip dislocations can be induced. The energy spectra of dislocations were measured with DLTS technique. One peak at Ev + 0.33eV in p-Si and two at peaks at Ec −0.37eV and Ec −0.50eV in n-Si have been found. These peaks are stable during thermal annealing at high temperature. But they can be passivated with hydrogen plasma annealing and reactivated by subsequent thermal annealing in vacuum. The dislocation core is reconstructed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 173
Copyright
Copyright © Materials Research Society 1986

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