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Deep States in a-Si:H - Changes with Doping and Applied Stress.

Published online by Cambridge University Press:  26 February 2011

J. Kočka  and
M. Vanéček
J. Kočka
Affiliation:
Institute of Physics, Czech. Academy of Sciences, Na Slovance 2, 180 40 Prague 8, Czechoslovakia.
M. Vanéček
Affiliation:
Institute of Physics, Czech. Academy of Sciences, Na Slovance 2, 180 40 Prague 8, Czechoslovakia.
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Abstract

Recent Constant Photocurrent Method (CPM) results and a new model of a-Si:H density of states are briefly reviewed. The small but systematic changes of subgap absorption (α) with the applied external stress have been found. When light-soaking is done under the applied stress the strong increase of α is observed. The μτ (mobility-lifetime) versus α duality is demonstrated. The increase of the dangling bond density, combined with the change of its charge state, is used for the explanation of duality. The light induced creation of dangling bond-impurity intimate pairs is speculated to be the driving force for the Fermi level shift.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 83
Copyright
Copyright © Materials Research Society 1987

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References

/1/ Street, R.A., J. of Non-Cryst. Solids 77/78, 1 (1985)Google Scholar
/2/ Kočka, J., Proc. of the Int. Conf. “Non-Crystalline Semiconductors ′86”, Balatonszeplak, Hungary (1986) to be publ. in J. of Non-Cryst. SolidsGoogle Scholar
/3/ Beichler, J., Mell, H. and Weber, K., J. Non-Cryst. Solids 59/60, 257 (1983)Google Scholar
/4/ Vaněček, M., Kočka, J., Stuchlík, J., Kožíšek, Z., Štika, O. and Tříska, A., Solar Energy Materials 8, 411 (1983)Google Scholar
/5/ Kočka, J., Vaněčk, M., Šípek, E. and Tříska, A., Proc. of the “18th Int. Conf. on Physics of Semiconductors”, Stockholm, Sweden (1986), to be publ.Google Scholar
/6/ Vaněčk, M., Stuchlík, J., Kočka, J. and Tříska, A., J. of Non-Cryst. Solids 77/78, 299 (1985)Google Scholar
/7/ Miramontes, R., Winer, K. and Ley, L., J. of Non-Cryst. Solids 77/78, 299 (1985) ref. /5/Google Scholar
/8/ Conrad, K.A., Schiff, E.A., Sol. St. Camm. 60, 291 (1986)Google Scholar
/9/ Bar-Yam, Y., Joannopoulos, J.D., Phys. Rev. Lett. 56, 2203 (1986)Google Scholar
/10/ Vaněčk, M., Kočka, J., Nesládek, M., Šípek, E., Štika, O. and Tříska, A., Proc. of the “7th E.C. Photovoltaic Solar Energy Conf.”, Sevilla, Spain (1986), to be publ.Google Scholar
/11/ Han, D. and Fritzsche, H., J. of Non-Cryst. Solids 59/60, 397 (1983)Google Scholar
/12/ Stutzmann, M., Jackson, W.B., Tsai, C.C., MRS Spring Meeting, San Francisco (1985)Google Scholar
/13/ Kurtz, S.R., Tsuo, Y.S., Tsu, R., Appl. Phys. Lett. 49, 951 (1986)Google Scholar
/14/ Guha, S., den Boer, W., Agarwal, S.D., Hack, M., Appl.-Phys. Lett. 47, 947 (1985)Google Scholar
/15/ Schauer, F. and Kočka, J., Phil. Mag. B52, L25 (1985)Google Scholar
/16/ Mc Mahon, T.J., Xi, J.P., “Int. Conf. on-the Stability of a-Si Alloy Materials and Devices, Palo Alto, Calif. (1987) to be publ.Google Scholar
/17/ Jackson, W.B., “Int. Conf. on-the Stability of a-Si Alloy Materials and Devices, Palo Alto, Calif. (1987) to be publ. ref. /16/Google Scholar
/18/ Stutzmann, M., “Int. Conf. on-the Stability of a-Si Alloy Materials and Devices, Palo Alto, Calif. (1987) to be publ. ref. /16/Google Scholar
/19/ Morigaki, K., in Hydrogenated Anorphous Silicon, Semiconductors and Semimetals 21C, edited by Pankove, J.I. (Academic Press, Orlando, 1984), p. 155–191 Google Scholar