Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-28T20:49:11.209Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect Characterization of InAs Films Grown by Two-Step MOCVD on (100) InP Substrates

Published online by Cambridge University Press:  25 February 2011

A. K. Ballal ,
L. Salamanca-Riba  and
D. L. Partin
A. K. Ballal
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742–2115.
L. Salamanca-Riba
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742–2115.
D. L. Partin
Affiliation:
Physics Department, General Motors Research Laboratories, Warren MI 48090–9055.
Get access

Abstract

In this paper we investigate the defect morphology and misfit strain in InAs films grown on (100) InP substrates using two-step metal organic chemical vapor deposition (MOCVD). High quality InAs films were obtained despite the 3.2% lattice-mismatch between the InAs film and the InP substrate. Cross-sectional and plan-view transmission electron microscopy has been used to characterize the ∼3μm thick InAs films. Almost all the lattice mismatch is accomodated by an orthogonal array of pure edge Lomer dislocations which are favored over the 60° type since they are more efficient in relieving misfit strain. In addition to misfit dislocations, threading dislocations were observed propagating through the film. Most of the threading dislocations were 60° type dislocations along the < 211 > and < 110 > directions on inclined {111} planes. The threading dislocations originate from island coalescence during film growth. High resolution electron microscopy shows the epitaxial relationship between the film and the substrate and reveals an abrupt and sharp interface with periodic dislocation cores.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 411
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Schneider, R. P. Jr, and Wessels, B. W., Appl. Phys. Lett. 54, 1142 (1989).Google Scholar
[2] Huang, K., and Wessels, B. W., J. Appl. Phys. 64, 6770 (1988).Google Scholar
[3] Lang, D. V., Panish, M. B., Capasso, F., Allam, J., Sergent, R. A., and Tsang, W. T., J. Vac. Sci. Technol. B 5, 1215 (1987).CrossRefGoogle Scholar
[4] Partin, D. L., Green, L., Morelli, D. T., Heremans, J., Fuller, B. K., and Thrush, C. M., J. Elec. Mat. 20, 1109 (1991).Google Scholar
[5] Ballal, A. K., Salamanca-Riba, L., Partin, D. L., Heremans, J., Green, L., and Fuller, B. K., (to be published).Google Scholar
[6] Chandra Shekar, K. S., Ballal, A. K., Salamanca-Riba, L., and Partin, D. L., Mat. Res. Soc. Symp. Proc. 1992 (in press).Google Scholar