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Defect Density in Doped a-Si:H Films

Published online by Cambridge University Press:  25 February 2011

K. Pierz ,
H. Mell  and
W. Fuhs
K. Pierz
Affiliation:
Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften, Universität Marburg, Renthof 5, D-3550 Marburg, Federal Republic of Germany
H. Mell
Affiliation:
Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften, Universität Marburg, Renthof 5, D-3550 Marburg, Federal Republic of Germany
W. Fuhs
Affiliation:
Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften, Universität Marburg, Renthof 5, D-3550 Marburg, Federal Republic of Germany
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Abstract

We compare the experimentally observed correlation between the density of charged dangling–bond defects and the Fermi–level position in n– and p–type a–Si:H films with the predictions of two hydrogen–related models for the thermal equilibrium state at the glass–transition temperature of the hydrogen glass in a–Si:H. Reasonable agreement is obtained with a defect reaction in which the transfer of hydrogen from Si–H bonds to weak bonds is limited to distances comparable to one atomic spacing. The results for p–type (boron–doped) films suggest that the formation of positively charged dangling–bond defects is not only determined by electronic energy differences but also by a relaxational energy gain of approximately 0.2eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 95
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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