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Defect Distribution and Defect Kinetics in Undoped and Boron-Doped A-Si:H Investigated by Modulated Photocurrents

Published online by Cambridge University Press:  25 February 2011

G. Schumm  and
G. H. Bauer
G. Schumm
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, Federal Republik of Germany
G. H. Bauer
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, Federal Republik of Germany
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Abstract

Gap state profiles in a-Si:H around the Fermi energy have been determined by phase shift analysis of modulated photocurrents. Measurements on different samples in various light-soaked and annealed states show a general strong correlation of the defect structure with the Fermi level position, with a minimum in the DOS at Ef and a peak above Ef. A model of the defect structure involving a peak of D+ states above Ef is outlined that accounts for the observed correlations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 327
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

[1] Staebler, D.L. and Wronski, C.R., Appl.Pys.Lett. 31, 292 (1977).Google Scholar
[2] Schumm, G. and Bauer, G.H., Phys.Rev.B 39 (15 March, 1989).Google Scholar
[3] Schumm, G. et al., MRS Symp.Proc. 118, 543 (1988).Google Scholar
[4] Schumm, G., Nitsch, K. and Bauer, G.H., Phil.Mag.B 58 411 (1988).CrossRefGoogle Scholar
[5] Cohen, J.D. and Lang, D.V., Phys.Rev.B 25, 5321 (1982).Google Scholar
[6] Beyer, W. and Overhof, H. in Semiconductors and Semimetals 21C edited by Pankove, J.I. (Acad. Press, Orlando 1984), p.257.Google Scholar
[7] Kocka, J. et al. in 8th. EC PV. Solar Energy Conf. Proc. edited by Solomon, , Equer, B., Helm, P. (Kluwer Acad. Publ., Dordrecht 1988) p.724.Google Scholar
[8] Bar-Yam, Y., Adler, D., Joannopoulos, J.D., Phys.Rev.Lett. 57, 467 (1986).CrossRefGoogle Scholar
[9] Spear, W.E., Hourd, A.C., Kinmond, S., J.Non-Cryst.Sol. 77&78, 607 (1985).Google Scholar
[10] Gelatos, A.V. and Cohen, J.D., J.Non-Cryst.Solids 97&98, 71 (1987).Google Scholar
[11] Pierz, K. et al., J.Non-Cryst.Solids 97&98, 63 (1987).Google Scholar