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Defect Physics of CuInSe2 for Photovoltaic Applications Using Extended X-ray Absorption Fine Structure (EXAFS)

Published online by Cambridge University Press:  01 February 2011

Theanne Schiros ,
Scott Calvin ,
P.E. Stallworth ,
Faisal Alamgir ,
J.-F. Guillemoles ,
S.G. Greenbaum  and
M.L. den Boer
Theanne Schiros
Affiliation:
Hunter College of the City University of New York, NY, NY 10021, USA
Scott Calvin
Affiliation:
Naval Research Laboratory, Washington D.C. 20375, USA
P.E. Stallworth
Affiliation:
Hunter College of the City University of New York, NY, NY 10021, USA
Faisal Alamgir
Affiliation:
Hunter College of the City University of New York, NY, NY 10021, USA
J.-F. Guillemoles
Affiliation:
Laboratoire d'Electrochimie et de Chimie Analytique ENSCP, 75231 Paris, FRANCE
S.G. Greenbaum
Affiliation:
Hunter College of the City University of New York, NY, NY 10021, USA
M.L. den Boer
Affiliation:
Hunter College of the City University of New York, NY, NY 10021, USA
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Abstract

Native point defects in undoped samples of CuInSe2 (CIS) have been identified by a multiple-edge refinement of the extended x-ray absorption fine structure of the copper, indium and selenium absorption edges. Ab initio theoretical models for the pure compound and for various defect structures were constructed and carrier-type statistics were predicted by simultaneously fitting multiple absorption sites to these models. As expected, a model of our measurements based on pure compounds with no defects does not yield a good fit to the data. We find that a best fit requires a significant population of defects. Preliminary quantitative analysis suggests a 15 % vacancy in Cu, a 2-12% population of Cu-Se anti-sites and 15% In-Se anti-sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B1.2
Copyright
Copyright © Materials Research Society 2003

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