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Defect Structures in YBa2Cu3O7−x Produced by Electron Irradiation*

Published online by Cambridge University Press:  28 February 2011

M. A. Kirk ,
M. C. Raker ,
J. Z. Liu ,
D. J. Lam  and
H. W. Weber
M. A. Kirk
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
M. C. Raker
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
J. Z. Liu
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
D. J. Lam
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
H. W. Weber
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
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Abstract

Defect structures in YBa2Cu3O7−x produced by electron irradiation at 300 K were investigated by transmission electron microscopy. Threshold energies for the production of visible defects were determined to be 152 keV and 131 keV (+ 7 keV) in directions near the a and b (b>a) axes (both perpendicular to c, the long axis in the orthorhombic structure), respectively. During above threshold irradiations in an electron flux of 3×1018 cm-2 s-1, extended defects were observed to form and grow to sizes of 10–50 nm over 1000 s in material thicknesses 20–200 nm. Such low electron threshold energies suggest oxygen atom displacements with recoil energies near 20 eV. The observation of movement of twin boundaries during irradiation just above threshold suggests movement of the basal plane oxygen atoms by direct displacement or defect migration processes. Crystals irradiated above threshold were observed after about 24 hours to have transformed to a structure heavily faulted on planes perpendicular to the c axis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 99: Symposium AA – High-Temperature Superconductors , 1987 , 209
Copyright
Copyright © Materials Research Society 1988

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Footnotes

**

Atominstitut der Osterreichischen Universitäten, A-1020 Wien, Austria.

*

Work supported by the U. S. Department of Energy, BES-Materials Sciences, under Contract W-31–109-Eng-38.

References

REFERENCES

1. Liu, J.Z., Crabtree, G.W., Jmezawa, A. I. and Zongquan, Li, Phys. Lett. A 121, 305 (1987).Google Scholar
2. Corbett, J.W., Electron Radiation damage in Semiconductors and Metals, Academic Press, Inc., New York, 1966, p 13.Google Scholar
3. Rothman, S.I. and Routbort, I.L., unpublished data.Google Scholar