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Defect Transitions in GaN Between 3.0 and 3.4 eV

Published online by Cambridge University Press:  10 February 2011

W. Rieger ,
O. Ambacher ,
E. Rohrer ,
H. Angerer  and
M. Stutzmann
W. Rieger
Affiliation:
Walter Schottky Institute, D-85748 Garching, Germany
O. Ambacher
Affiliation:
Walter Schottky Institute, D-85748 Garching, Germany
E. Rohrer
Affiliation:
Walter Schottky Institute, D-85748 Garching, Germany
H. Angerer
Affiliation:
Walter Schottky Institute, D-85748 Garching, Germany
M. Stutzmann
Affiliation:
Walter Schottky Institute, D-85748 Garching, Germany
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Abstract

We have studied optical transitions (absorption and luminescence) in nominally undoped and Mg-doped GaN deposited by MOCVD and MBE. In the range between 3.0 and 3.4 eV, a variety of well known low-intensity luminescence lines are observed, whose origin is discussed. In particular, by comparing excitation with subgap versus above-gap laser lines as well as by combining optical subgap absorption with spectrally resolved photoconductivity, we identify localized optical transitions occuring in isolated cubic inclusions in the otherwise hexagonal GaN epitaxial layers. Implications of these strucural defects for photocurrent transients are also presented.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 671
Copyright
Copyright © Materials Research Society 1997

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References

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