Hostname: page-component-848d4c4894-hfldf Total loading time: 0 Render date: 2024-05-15T02:32:44.521Z Has data issue: false hasContentIssue false
  • English
  • Français

Defects and Interfaces in III-Nitride/Sapphire Thin Film Heterostructures

Published online by Cambridge University Press:  15 February 2011

S. Oktyabrsky ,
K. Dovidenko ,
A. K. Sharma  and
J. Narayan
S. Oktyabrsky
Affiliation:
Center for Advanced Materials and Smart Structures, North Carolina State University, Raleigh, NC 27695-7916.
K. Dovidenko
Affiliation:
Center for Advanced Materials and Smart Structures, North Carolina State University, Raleigh, NC 27695-7916.
A. K. Sharma
Affiliation:
Center for Advanced Materials and Smart Structures, North Carolina State University, Raleigh, NC 27695-7916.
J. Narayan
Affiliation:
Center for Advanced Materials and Smart Structures, North Carolina State University, Raleigh, NC 27695-7916.
Get access

Abstract

High quality III-nitrides and zinc oxide thin film heterostructures have been fabricated using pulsed laser deposition (PLD) on highly lattice mismatched sapphire substrates. The structural quality of PLD films grown at 700-800°C is comparable with those grown by MOCVD in the temperature range 950-1050°C. The PLD films were found to be single crystalline with columnar structure having the dislocation density of ~1010 cm2 at a film thickness 150-200 nm. The typical structure of defects and interfaces in GaN and AIN films is analyzed and compared with those obtained from specimens grown by MOCVD at much higher temperatures. Low temperature PLD (< 780°C) does not require additional atomic nitrogen source to compensate for the loss of nitrogen due to thermal decomposition of the nitride layer. At slightly higher temperatures the GaN films exhibit rough morphology and formation of the cubic zinc-blende phase which is more stable against nitrogen deficiency than wurtzite phase. A mechanism of formation of zinc-blende phase has been identified. Growth of GaN on lattice-matched ZnO/sapphire buffer layers showed the formation of cubic spinel ZnGa2O4 intermediate layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 526: Symposium Y – Advances in Laser Ablation of Materials , 1998 , 287
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nakamura, S., 2nd International Conf. on Nitride Semiconductors, Tokushima, Japan, October 1997.Google Scholar
2. Vispute, R. D., Narayan, J., Wu, H. and Jagannadham, K., J. Appl. Phys. 77, 4724 (1995).Google Scholar
3. Vispute, R. D., Talyansky, V., Sharma, R.P., Choopun, S., Downes, M., Venkatesan, T., Jones, K.A., Iliadis, A.A., Khan, M.A., and Yang, J.W., Appl. Phys. Lett. 71, 102 (1997).Google Scholar
4. Huang, T.F., Tuncel, E., Yeo, J.S., and Harris, J.S. Jr., MRS Symp. Proc. vol. 421, 389 (1996).Google Scholar
5. Feiler, D., Williams, R.S., Talin, A.A., Yoon, H., and Goorsky, M.S., J. Cryst. Growth, 171, 12 (1997).Google Scholar
6. Xiao, R.F., Sun, X.W., Li, Z.F., Cue, N., Kwok, H.S., Liu, Q.Z., and Lau, S.S., J. Vac. Sci. Technol. A15, 2207 (1997).Google Scholar
7. Cuidoni, A.G., Mele, A., Di Palma, T.M., Flamini, C., Orlando, S., and Teghil, R., Thin Solid Films, 295, 77 (1997)Google Scholar
8. Sharma, A.K., Dovidenko, K., Oktyabrsky, S., and Narayan, J. in Advances of Laser Ablation of Materials, (this volume) MRS, 1998.Google Scholar
9. Warren Weeks, T., Bremser, Michael D., Shawn Ailey, K., Carlson, Eric, Perry, William G., Davis, Robert F., Appl. Phys. Lett., 67, 401 (1995)Google Scholar
10. Boutros, K. S., McIntosh, F. G., Roberts, J. C., Bedair, S. M., Piner, E. L., EI-Masry, N. A. Appl. Phys. Lett., 67(13), 1856 (1995).Google Scholar
11. Saxler, A., Walker, D., Kung, P., Zhang, X., Razeghi, M., Solomon, J., Mitchel, W. C., Vydyanath, H. R., Appl. Phys. Lett., 71, 3272 (1997).Google Scholar
12. Vennegues, P., Beaumont, B., Vaille, M., and Gibart, P., J. Cryst. Growth, 173, 249 (1997)Google Scholar
13. Wu, X.H., Brown, L.M., Kapolnek, D., Keller, S., Keller, B., DenBaars, S.P., Speck, J.S., J. Appl. Phys., 80, 3238 (1996).Google Scholar
14. Dovidenko, K., Oktyabrsky, S., Narayan, J., and Razeghi, M., J. Appl. Phys., 79, 2439 (1996).Google Scholar
15. Rouviere, J.-L., Arlery, M., Bourret, A., Niebuhr, R., Bachem, K.-H., Materials Science and Engineering, B43, 161 (1997).Google Scholar
16. Dovidenko, K., Oktyabrsky, S., Narayan, J., Joshkin, V., and Razeghi, M. in Nitride Semiconductors, Ed. by Ponce, F.A., DenBaars, S.P., Meyer, B.K., Nakamura, S., Strite, S., MRS 1997, v.482 (in press).Google Scholar
17. Narayan, J., Dovidenko, K., Sharma, A., and Oktyabrsky, S., J. Appl. Phys. (1998) (submitted).Google Scholar