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Defects Induced by Protons and γ-Rays in Semi-Insulating Gaas Detectors

Published online by Cambridge University Press:  16 February 2011

A. Castaldini ,
A. Cavallini ,
C. Del Papa ,
G. Fuochi ,
M. Alietti ,
C. Canali ,
F. Nava ,
A. Paccagnellam  and
C. Lanzieriv
A. Castaldini
Affiliation:
Dipartimento di Fisica, Bologna; I ALENIA S.p.A Roma, Italy
A. Cavallini
Affiliation:
Dipartimento di Fisica, Bologna; I ALENIA S.p.A Roma, Italy
C. Del Papa
Affiliation:
Dipartimento di Fisica, Bologna; I ALENIA S.p.A Roma, Italy INFN Sez. Bologna.; I ALENIA S.p.A Roma, Italy
G. Fuochi
Affiliation:
FRAE-CNR, Bologna; I ALENIA S.p.A Roma, Italy
M. Alietti
Affiliation:
Facoltà di Ingegneria, Modena; I ALENIA S.p.A Roma, Italy
C. Canali
Affiliation:
Facoltà di Ingegneria, Modena; I ALENIA S.p.A Roma, Italy
F. Nava
Affiliation:
INFN Sez. Bologna.; I ALENIA S.p.A Roma, Italy
A. Paccagnellam
Affiliation:
Istituto di Elettrotecnica, Cagliari I ALENIA S.p.A Roma, Italy
C. Lanzieriv
Affiliation:
I ALENIA S.p.A Roma, Italy
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Abstract

Semi-insulating gallium arsenide has been irradiated by protons and by gamma-rays with different doses. The irradiation-induced deep level defects have been investigated by current transient spectroscopy to find their energy, capture cross sections and generation rate.Two electron traps at Ec+0.14eV(E13) and Ec-0.70eV(E4) and a hole trap at Ec-0.14eV(H2) in addition to the levels existing before the irradiation have been detected in the irradiated samples. These findings have been related to the performance of gallium arsenide charge particle detectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994 , 523
Copyright
Copyright © Materials Research Society 1995

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References

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