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Defects Related To Electrical-Leakage In Tmos Structures

Published online by Cambridge University Press:  21 February 2011

Lynnita Knoch ,
N. David Theodore ,
Pak Tam  and
Taku Yamamoto
Lynnita Knoch
Affiliation:
Motorola Inc., Advanced Custom Technologies, 2200 W. Broadway Rd., M350, Mesa, AZ 85202;
N. David Theodore
Affiliation:
Motorola Inc., Materials Research and Strategic Technologies, M360, Mesa, AZ 85202;
Pak Tam
Affiliation:
Motorola Inc., Advanced Custom Technologies, 2200 W. Broadway Rd., M350, Mesa, AZ 85202;
Taku Yamamoto
Affiliation:
Nippon Motorola Inc., 1 Ooyaji Kofune Shiokawa-machi, Yama-gun, Fukushima-ken 969-35, Japan.
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Abstract

TMOS devices for power applications use ion-implantation for doped layers. Implant-damage can increase electrical leakage of devices. Transmission electron microscopy was used to study the effect of dose (4E14 - 2E15 cm-2) and energy (20-40 keV) of p+ implants on damage related to leakage in TMOS structures. TEM reveals a high density of boron implant-induced defects such as end-of-range and peak-of-implant damage, boron implant-induced stacking faults and dislocations. End-of-range defects also arise from an arsenic implant, and mask-edge defects arise where arsenic-amorphized Si and crystalline Si meet in the source region. Some defects extend >0.5 μπι into the substrate. The density and the extent of defect penetration decrease with decreasing implant-dose and energy. These data correlate well with the electrical data, which show that Idss leakage decreases with decreasing p+ implant-energy and dose.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 325
Copyright
Copyright © Materials Research Society 1995

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