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Degradation Phenomena of low-temp. poly-Si TFT's Under Electrical Stress Before and After Hydrogenation

Published online by Cambridge University Press:  15 February 2011

Y. S. Kim ,
K. Y. Choi ,
M. C. Jun  and
M. K. Han
Y. S. Kim
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151–742, Korea
K. Y. Choi
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151–742, Korea
M. C. Jun
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151–742, Korea
M. K. Han
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151–742, Korea
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Abstract

The degradation mechanism in hydrogen passivated and as-fabricated poly-Si TFT's are investigated under the various electrical stress conditions. It is observed that the charge trapping in the gate dielectric is the dominant degradation mechanism in poly-Si TFT's which was stressed by the gate bias alone while the creation of defects in the poly-Si film is prevalent in gate and drain bias stressed devices. The degradation due to the gate bias stress is dramatically reduced with hydrogenation time while the degradation due to the gate and drain bias stress is increased a little. From the experimental results, it is considered that hydrogenation suppress the charge trapping at gate dielectrics as well as improve the characteristics of poly-Si TFT's.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 155
Copyright
Copyright © Materials Research Society 1994

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