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Density Measurements of Ion Implanted Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

J. S. Custer ,
Michael O. Thompson ,
D. C. Jacobson ,
J. M. Poate ,
S. Roorda ,
W. C. Sinke  and
F. Spaepen
J. S. Custer
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Michael O. Thompson
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. Roorda
Affiliation:
FOM-Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, The Netherlands
W. C. Sinke
Affiliation:
FOM-Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, The Netherlands
F. Spaepen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
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Abstract

The density of amorphous Si was measured. Continuous and buried amorphous Si films were produced by 0.5-8 MeV Si implantation through a steel contact mask. Surface steps of amorphous Si stripes with initial thicknesses from 0.9 to ∼ 5.0 μm were measured using a surface profilometer. For implants up to 5 MeV, the amorphous Si is constrained laterally by the surrounding crystal and deforms plastically. The density of amorphous Si deduced from the surface step heights is 4.91 × 1022 cm-3, 1.7 ± 0.1 % less than the density of crystal Si (5.00 × 1022 cm-3).

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 689
Copyright
Copyright © Materials Research Society 1990

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References

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