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Dependence of PECVD Silicon Oxynitride Properties on Deposition Parameters

Published online by Cambridge University Press:  25 February 2011

Aubrey L. Helms Jr  and
Robert M. Havrilla
Aubrey L. Helms Jr
Affiliation:
AT&T Bell Laboratories - Engineering Research Center, PO Box 900, Princeton, NJ 08540
Robert M. Havrilla
Affiliation:
AT&T Microelectronics, 2525 N. 12th St., Reading, PA 19604
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Abstract

The properties of Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon oxynitride thin films were determined for a variety of deposition conditions. The films were characterized with respect to stress, refractive index, deposition rate, hydrogen content, dielectric constant, and uniformity. The films were deposited in an Electrotech ND6200 parallel plate reactor using a silane - ammonia - nitrous oxide process gas chemistry. Deposition parameters which were investigated include process gas flow rate, power, and total pressure. The possible application of these films as both inter-layer and final passivation layers for use on GaAs ICs will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 295
Copyright
Copyright © Materials Research Society 1989

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References

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