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Deposition of Silicon Dioxide Layers on Inp by Flash C.V.D for Misfet Applications

Published online by Cambridge University Press:  21 February 2011

Y. I. Nissim ,
J. L. Regolini ,
D. Bensahel  and
G. Post
Y. I. Nissim
Affiliation:
C.N.E.T. Laboratoire de Bagneux, 196 Av. H. Ravera, 92220 BAGNEUX (FRANCE)
J. L. Regolini
Affiliation:
C.N.E.T., CNS, BP 98, 38243 MEYLAN (FRANCE)
D. Bensahel
Affiliation:
C.N.E.T., CNS, BP 98, 38243 MEYLAN (FRANCE)
G. Post
Affiliation:
C.N.E.T. Laboratoire de Bagneux, 196 Av. H. Ravera, 92220 BAGNEUX (FRANCE)
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Abstract

Silicon dioxide films deposited on InP substrates are obtained in a reduced pressure, air and water cooled horizontal CVD reactor, with a rapid thermal heating. Deposition temperature as high as 700°C could be utilized with no degradation of the InP surface. At this temperature the resulting silicon dioxide films have excellent structural and electrical properties. MIS capacitors fabricated on InP substrates have been tested and a transistor behaviour has been observed on a first set of InP MISFETs. In situ processing for surface preparation prior to deposition can be utilized with this technique. A first attempt of in situ multiprocessing was carried on silicon substrates and is presented here.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 277
Copyright
Copyright © Materials Research Society 1988

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References

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