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Depth Profiles of Thermal Donors in Czochralski-Grown N-Type Silicon

Published online by Cambridge University Press:  03 September 2012

Yutaka Tokuda ,
Toshihisa Shimokata ,
Masayuki Katayama  and
Tadashi Hattori
Yutaka Tokuda
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470–03, Japan
Toshihisa Shimokata
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470–03, Japan
Masayuki Katayama
Affiliation:
Research Laboratories, Nippondenso Co. Ltd., Nisshin, Aichi 470–01, Japan
Tadashi Hattori
Affiliation:
Research Laboratories, Nippondenso Co. Ltd., Nisshin, Aichi 470–01, Japan
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Abstract

Depth profiles of thermal donors introduced by heat treatment at 450°C in Czochralski-grown n-type silicon have been studied through capacitance-voltage measurements of Au Schottky diodes in the oxygen concentration range 8.1×1017 to 15.3×1017 cm3 Thermal donor concentrations increase with depth and their depth profiles are fitted to the error function equation. The obtained diffusivity decreases with annealing time and is higher for samples with the lower initial oxygen concentrations. Combining with the infrared absorption measurements, it is found that the curves of the diffusivity as a function of loss of interstitial oxygen coincide with each other. The similar tendency is observed on the oxygen diffusivity evaluated with secondary ion mass spectrometry. These results indicate that the oxygen diffusivity at 450°C is related to both the outdiffusion and clustering of oxygen. Depth profiles of thermal donors formed at 650°C are also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 75
Copyright
Copyright © Materials Research Society 1992

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References

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