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Detection of Copper and Water in Low-k Dielectrics by Triangular Voltage Sweep Measurements

Published online by Cambridge University Press:  01 February 2011

Ivan Ciofi ,
Zsolt Tökei ,
Marco Saglimbeni  and
Marleen Van Hove
Ivan Ciofi
Affiliation:
Ivan.Ciofi@imec.be, IMEC, ITTO, Kapeldreef 75, Leuven, 3001, Belgium, +32 16 28 8332, +32 16 28 1576
Zsolt Tökei
Affiliation:
Zsolt.Tokei@imec.be, IMEC, Kapeldreef 75, Leuven, N/A, 3001, Belgium
Marco Saglimbeni
Affiliation:
Marco.Saglimbeni@imec.be, IMEC, Kapeldreef 75, Leuven, N/A, 3001, Belgium
Marleen Van Hove
Affiliation:
Marleen.Van Hove@imec.be, IMEC, Kapeldreef 75, Leuven, N/A, 3001, Belgium
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Abstract

Metal-Insulator-Semiconductor (MIS) planar capacitors were fabricated in order to systematically investigate the effect of Cu and water in Cu/low-k structures by Triangular Voltage Sweep (TVS) measurements. We were able to resolve peculiar features in the TVS traces of Cu and water contaminated samples, which were related to Cu ions and protons, respectively. We demonstrate that these features can be used to distinguish the two ionic species. As these features do not depend on the specific dielectric, we provide a methodology to detect and distinguish Cu and water in porous low-k materials embedded in MIS structures.

Keywords

CuHdielectric

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References

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