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Determination of BPSG Thin-Film Properties using IR Reflection Spectroscopy of Product Wafers

Published online by Cambridge University Press:  22 February 2011

Thomas M. Niemczyk ,
James E. Franke ,
Lizhong Zhang ,
David M. Haaland  and
Kenneth J. Radigan
Thomas M. Niemczyk
Affiliation:
Chemistry Department, University of New Mexico, Albuquerque, NM 87131 Sandia National Laboratories, Albuquerque, NM 87185 National Semiconductor, Santa Clara, CA 95052
James E. Franke
Affiliation:
Chemistry Department, University of New Mexico, Albuquerque, NM 87131 Sandia National Laboratories, Albuquerque, NM 87185 National Semiconductor, Santa Clara, CA 95052
Lizhong Zhang
Affiliation:
Chemistry Department, University of New Mexico, Albuquerque, NM 87131 Sandia National Laboratories, Albuquerque, NM 87185 National Semiconductor, Santa Clara, CA 95052
David M. Haaland
Affiliation:
Chemistry Department, University of New Mexico, Albuquerque, NM 87131 Sandia National Laboratories, Albuquerque, NM 87185 National Semiconductor, Santa Clara, CA 95052
Kenneth J. Radigan
Affiliation:
Chemistry Department, University of New Mexico, Albuquerque, NM 87131 Sandia National Laboratories, Albuquerque, NM 87185 National Semiconductor, Santa Clara, CA 95052
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Abstract

Three BPSG calibration sets were analyzed using infrared external reflection-absorption spectroscopy: 1) 21 films deposited on undoped silicon coated with 0.1 pm of silicon dioxide, 2) 21 films deposited on undoped silicon, and 3) 9 films deposited on microelectronics product wafers. A multivariate partial least squares analysis of the spectral data for the first large data set showed that boron content, phosphorus content, and film thickness can be quantified with precisions of 0.10 wt%, 0.12 wt%, and 30 Å, respectively. The second large data set yielded similar results. The precisions obtained for the nine product wafer samples were 0.13 wt% B, 0.09 wt% P, and for film thickness 103 Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 93
Copyright
Copyright © Materials Research Society 1994

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References

1. Kern, W., Kurylo, W.A., and Tino, C.J., RCA Review, 46, 117–152 (1985).Google Scholar
2. Franke, J.E., Niemczyk, T.M., and Haaland, D.M., Spectrochimica Acta, in press.Google Scholar
3. Franke, J.E., Zhang, L., Niemczyk, T.M., Haaland, D.M., and Linn, J.H., J. Electrochem. Soc., 140(5), 1425 (1993).Google Scholar
4. Haaland, D.M., Anal. Chem., 60, 1208 (1988).CrossRefGoogle Scholar
5. Haaland, D.M. and Thomas, E.V., Anal. Chem., 60, 1193 (1988).CrossRefGoogle Scholar