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Determination of Defects Concentration from C-V and G-V Curves in a MOSFET Structure

Published online by Cambridge University Press:  31 January 2011

Nadine Abboud  and
Roland Habchi
Nadine Abboud
Affiliation:
nadine_1313@hotmail.com, Lebanese University, Physics, fanar, Lebanon
Roland Habchi
Affiliation:
rhabchi@ul.edu.lbhabchi_7@yahoo.com, Lebanese University, Physics, fanar, Lebanon
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Abstract

The gate oxides of Si based MOSFET devices are subjected to a high field in order to induce defects in the oxide bulk and at the Si/SiO2 interface. The defects are characterized by a series of gate to source capacitance and conductance measurements. Shifts in the flat band voltage and the threshold voltage are observed and are related to the position of charged defects. The difference of the equivalent charge between the two types of defects is also determined. Conductance measurements are performed to determine the difference of interface states concentration as a function of the high field exposure time.

Keywords

defectsdevicesmicroelectronics

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