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Determination Of Intermetallic Formation Mechanism Using Differential Scanning Calorimetry Of Multilayered Thin Films

Published online by Cambridge University Press:  25 February 2011

T. E. Schlesinger ,
S. M. Prokes  and
R. C. Cammarata
T. E. Schlesinger
Affiliation:
Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, MD 21218
S. M. Prokes
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
R. C. Cammarata
Affiliation:
Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, MD 21218
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Abstract

The ability to determine which growth mechanism (interface-reaction-rate-limited vs. diffusion-limited) of intermetallic formation by interfacial reactions using differential scanning calorimetry (DSC) is demonstrated. Suicide formation in multilayered thin films of chromium and amorphous silicon was chosen as a model system. It is shown that suicide formation in this system followed a linear rate law corresponding to an interface-reaction-rate-limited growth mechanism. An activation energy and pre-exponential for the rate constant were determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 677
Copyright
Copyright © Materials Research Society 1992

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References

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