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Determination of the Optical & Materials Properties of βFeSi2 Layers Fabricated Using Ion Beam Synthesis

Published online by Cambridge University Press:  25 February 2011

T. D. Hunt ,
K. J. Reeson ,
R. M. Gwilliam ,
K. P. Homewood ,
R. J. Wilson ,
R. S. Spraggs ,
B. J. Sealy ,
C. D. Meekison ,
G. R. Booker  and
P. Oberschachtsiek
T. D. Hunt
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
K. J. Reeson
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
R. M. Gwilliam
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
K. P. Homewood
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
R. J. Wilson
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
R. S. Spraggs
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
B. J. Sealy
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
C. D. Meekison
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
G. R. Booker
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
P. Oberschachtsiek
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
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Abstract

IBS of buried α and β iron suicide layers was achieved by the implantation of 2 MeV 56Fe+ ions into (100) single crystal silicon substrates over a dose range of 3 × 1017 to 1 × 1018 cm“-2followed by a high temperature anneal. No photoluminescence was observed from the as-implanted samples which contained a discontinuous layer of βFeSi2 precipitates approximately 1.5 μm below the silicon surface. Upon annealing at 700°C, a 200 nm polycrystalline βFeSi2 layer was formed which gave a PL signal centred at 1.55 μm. After a 900°C anneal, the layer transformed to αFeSix with a resistivity of approximately 280μΩcm.

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References

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