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Development of Low-Temperature Ambipolar a-SiGe:H Thin-Film Transistors Technology

Published online by Cambridge University Press:  18 May 2012

Miguel A. Dominguez ,
Pedro Rosales ,
Alfonso Torres  and
Mario Moreno
Miguel A. Dominguez
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
Pedro Rosales
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
Alfonso Torres
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
Mario Moreno
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
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Abstract

We present the fabrication and characterization of low-temperature ambipolar thin-film transistors (TFTs) based on hydrogenated amorphous silicon-germanium (a-SiGe:H) as active layer. Inverted staggered a-SiGe:H TFTs were fabricated on Corning glass. Spin-on glass silicon dioxide was used as gate dielectric to improve the quality of the dielectric-semiconductor interface. For positive gate bias the transfer characteristic showed n-type TFT behavior, while for negative gate bias p-type behavior was observed. The n-type region exhibits subthreshold slope of 0.45 V/decade while the p-type region shows a subthreshold slope of 0.49 V/decade.

Keywords

amorphousdevicesthin film

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