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Development of Remote Plasma Enhanced Ohemical Vapor Deposition Processes Through the use of in Vacuo Electron Diffraction and Electron Spectroscopy

Published online by Cambridge University Press:  21 February 2011

R. A. Rulder ,
G. G. Fountain ,
S. V. Hattangady ,
J. B. Posthill  and
R. J. Markunas
R. A. Rulder
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
G. G. Fountain
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
S. V. Hattangady
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
J. B. Posthill
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
R. J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
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Abstract

Remote plasma enhancecd chemical vapor deposition techniques have been developed for a wide variety of processes. These include SiO2, Si3N4, Si, Ge, GaN, GaAs, and a-Si:H depositions. This development has been enabled through the use of electron diffraction and electron spectroscopy techniques. These techniques have been used to qualify cleaning procedures prior to epitaxial or dielectric depositions. They have beeii used to qualify epitaxial deposition conditions by defining suitable.temperature and rate conditions. And, they have been used to evaluate cross-contamination issues. In situ techniques have been used in conjunction with ex situ characterizations to identify and correct problems in wafer cleaning, epitaxy, and process integration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 151
Copyright
Copyright © Materials Research Society 1990

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References

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