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Device Applications of Rapid Thermal Processing

Published online by Cambridge University Press:  22 February 2011

J. F. Gibbons ,
D. M. Dobkin ,
M. E. Greiner ,
J. L. Hoyt  and
W. G. Opyd
J. F. Gibbons
Affiliation:
Stanford Electronics Laboratories, Stanford, California 94305
D. M. Dobkin
Affiliation:
Stanford Electronics Laboratories, Stanford, California 94305
M. E. Greiner
Affiliation:
Stanford Electronics Laboratories, Stanford, California 94305
J. L. Hoyt
Affiliation:
Stanford Electronics Laboratories, Stanford, California 94305
W. G. Opyd
Affiliation:
Stanford Electronics Laboratories, Stanford, California 94305
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Abstract

The potential of rapid thermal processing for applications in silicon integrated circuit technology, silicon microwave bipolar technology and GaAs FET technology is explored.In addition, two novel applications for GaAs processing are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 37
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1.Laser-Solid Interactions and Laser Processing, Ferris, S. D., Leamy, H. J. and Poate, J. M., eds. AIP Conf. Proc. 50 (New York, Am. Inst. Phys., 1979).Google Scholar
2.Laser and Electron Beam Processing of Materials, White, C. W. and Peercy, P. S., eds. (New York, Academic Press, 1980).Google Scholar
3.Laser and Electron Beam - Solid Interactions and Materials Processing, Gibbons, J. F., Hess, L. D. and Sigmon, T. W., eds. (New York, North Holland, 1981).Google Scholar
4.Laser and Electron Beam Interactions with Solids, Appleton, B. R. and Celler, G. K., eds. (New York, North Holland, 1982).Google Scholar
5.Laser-Solid Interactions and Transient Thermal Processing of Materials, Narayan, J., Brown, W. L. and Lemors, R. A., eds. (New York, North Holland, 1983).Google Scholar
6.Hill, C., in Ref. 5, pp. 381-392.Google Scholar
7.Tsai, M. Y., Morehead, F. F., Baglin, J. E. E., and Michel, A. E., J. App. Phys., 51, 3230 (1981).Google Scholar
8.Current, M. and Yee, A., Solid State Technology, Oct. 1983, pp. 197– 202.Google Scholar
9.Barton, J. L., Cellar, G. K., Jacobsen, D. C., Kemerling, L. C., Lisdiner, D. J., Miller, G. L. and Robinson, McD., Ref. 4, pp. 765 ff.Google Scholar
10.Baumgart, H., Celler, G. K., Lischner, D. J., Robinson, McD. and Sheng, T. T., Ref. 5, pp. 349–354.Google Scholar
11.Hodgson, R. T., Baglin, J. E. E., Michel, A. E., Mader, S., Gelpy, J. C., Ref. 5, pp. 355–360.Google Scholar
12.Kashiwagi, M., private communication.Google Scholar
13.Seidel, T. E., IEEE Elec. Dev. Lett. EDL–4, 10, Oct. (1983).Google Scholar
14.Pensl, G., Schulz, M., Stolz, P., Johnson, N. M., Gibbons, J. F. and Hoyt, J., Materials Research Symposium, Nov. (1983).Google Scholar
15.Sakai, T., Konaka, S., Kabayashi, Y., Suzuki, M., Kawai, Y., Elec. Lett. 284, May (1982)Google Scholar
16.Natsuaki, N., Tamura, M., Miyazaki, T., and Yanagi, Y., Extended Abstracts of 15th Cont. on Solid State Devices and Materials, Japanese Society for Appl. Phys., Tokyo (1983), pp. 47–50.Google Scholar
17.Arai, M., Nisibiyama, K., and Watanabe, N., Jap. Int. Appl. Phys. 20, L 124 (1981).Google Scholar
18.Kuzuhara, M., Kohzu, H. and Takayama, Y., Appl. Phys. Lett. 41, 755 (1982).Google Scholar
19.Rose, A., Pllock, J. T. A., Scott, M. D., Adams, F. M., Williams, J. S. and Lawson, E. M., Ref. 5, pp. 633–639.Google Scholar
20.Davies, D. E., McNally, P. J., Lorenzo, J. P. and Julian, M., IEEE Elec. Dev. Lett. EDL–3, 102 (1982).Google Scholar
21.Surridge, R. K., Sealy, B. J., D'Cruz, A. D. E. and Stephens, K. G., GaAs Related Compounds, Edinburgh, 1976 Inst. of Phys. Cont. Ser. No. 33a, 161 (1977).Google Scholar
22.Chapman, R. J., Fan, J. C. C., Donnelly, J. P. and Tsaur, B.-Y., Appl. Phys. Lett. 40, 805 (1982).Google Scholar
23.Tabataaie-Alavi, K., Masum Choudhury, A. N. M., Fonstad, C. G. and Gelpey, J. C., Appl. Phys. Lett. 43, 5, (1983).Google Scholar
24.Christel, L. A. and Gibbons, J. F., J. Appl. Phys. 52, 8 (1981).Google Scholar
25.Parkinsen, B., Heller, A. and Miller, B., Appl. Phys. Lett. 33, 6, 520 (1978).Google Scholar