Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-19T22:44:11.136Z Has data issue: false hasContentIssue false
  • English
  • Français

Diagnostics And Control Of High-Density Etching Plasmas

Published online by Cambridge University Press:  15 February 2011

H. Sugai ,
K. Nakamura ,
T. H. Ahn  and
M. Nakamur
H. Sugai
Affiliation:
Department of Electrical Engineering, Nagoya University Furo-cho, Chikusa-ku, Nagoya 464-01, Japan, sugai@nuee.nagoya-u.ac.jp
K. Nakamura
Affiliation:
Department of Electrical Engineering, Nagoya University Furo-cho, Chikusa-ku, Nagoya 464-01, Japan, sugai@nuee.nagoya-u.ac.jp
T. H. Ahn
Affiliation:
Department of Electrical Engineering, Nagoya University Furo-cho, Chikusa-ku, Nagoya 464-01, Japan, sugai@nuee.nagoya-u.ac.jp
M. Nakamur
Affiliation:
Department of Electrical Engineering, Nagoya University Furo-cho, Chikusa-ku, Nagoya 464-01, Japan, sugai@nuee.nagoya-u.ac.jp
Get access

Abstract

Advanced diagnostics of high-density inductively coupled plasmas (ICPs) are presented supporting the following three proposals of innovative etching modes: First, pulsed plasma etching mode can suppress charge-up on high-aspect-ratio micro-patterns. In order to understand the mechanism, time-resolved measurements of electrons, chlorine atoms and negative ions in a pulsed chlorine ICP are performed. As a result of electron cooling and negative ion yield in afterglow, electrons are found to be accelerated toward a rf-biased electrode, thus neutralizing positive surface charges on that. Second, downstream etching mode using C4F8 gas enables high etch selectivity of SiO2 to Si. The reason for this is qualitatively discussed using comprehensive measurements of spatial distributions of CF3, CF2, CF and F densities in CF4 and C4F8 plasmas. Third, hot wall etching mode also enables high selectibity etching in fluorocarbon plasmas. Radical diagnostics reveal that wall heating dramatically modifies the radical composition of both CF4 and C4F8 plasmas, and it improves the etch selectivity and reproducibility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 15
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fukasawa, T., Nakamura, A., Shindo, H. and Horiike, Y., Jpn. J. Appl Phys. 33, 2139(1994).Google Scholar
2. Samukawa, S., Appl. Phys. Lett. 64, 3398 (1994).Google Scholar
3. Ahn, T. H., Nakamura, K. and Sugai, H., Jpn. J. Appl. Phys. 34, L1405 (1995)Google Scholar
4. Ahn, T. H., Nakamura, K. and Sugai, H., to be published in Plasma Sources Sci. Technol.Google Scholar
5. Samukawa, S., Jpn. J. Appl. Phys. 33, 2133 (1994).Google Scholar
6. Sugai, H. and Toyoda, H., J. Vac. Sci. & Technol. A10, 1193 (1992).Google Scholar
7. Hikosaka, Y., Nakamura, M. and Sugai, H., in Proceedings of 2nd Int. Conf. on Reactive Plasmas (Yokohama, Japan, 1994), p.67.Google Scholar
8. Shirakawa, T. and Sugai, H., Jpn. J. Appl. Phys. 32, 5129 (1993).Google Scholar
9. Gottscho, R. A. and Gaebe, C. E., IEEE Trans. Plasma Sci. PS–14, 92 (1986).Google Scholar
10. Overzet, J., J. Vac. Sci. Technol., A11 1114 (1993).Google Scholar
11. Haverlag, M., Kono, A., Passchier, D., Kroesen, G. M. W., Goedheer, W. J. and Hoog, F. J. de, J. Appl. Phys. 70, 3472 (1991).Google Scholar
12. Kono, A., Endo, M., Ohata, K., Kishimoto, S. and Goto, T.: J. Appl. Phys, 76, 7221 (1994).Google Scholar
13. Ashida, S., Lieberman, M. A. and Lee, C., to be published in J. Vac. Sci. Technolo. A.Google Scholar
14. Rogoff, G. L., Kramer, J. M. and Piejak, R. B., IEEE Trans. Plasma Sci. PSPS–14, 103 (1986).Google Scholar
15. Sugai, H., Nakamura, K. and Suzuki, K., Jpn. J. Appl. Phys. 33, 2189 (1994).Google Scholar
16. Sugai, H. and Toyoda, H., J. Vac. Sci. Technol. A10, 1193(1992).Google Scholar
17. Ito, S., Nakamura, K. and Sugai, H., Jpn. J. Appl. Phys. 33, L1261 (1994).Google Scholar
18. Chinzei, Y., Ichiki, T., Kurosaki, R., Shindo, H. and Horiike, Y., in Proc. Dry Process Symposium (Tokyo, Japan, 1995), p. 249.Google Scholar