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DIFFRACTION STUDIES OF METAL-SEMICONDUCTOR INTERFACES

Published online by Cambridge University Press:  28 February 2011

D. CHERNS  and
C.J. KIELY
D. CHERNS
Affiliation:
H.H.Wills Physics LaboANraDt oErAyG, LESBHArMis toDl. J.U**niversity, Tyndall Avenue, Bristol BS8 lTL, U.K.
C.J. KIELY
Affiliation:
Department of Metallurgy and Material Science, University of Liverpool, P.O.Box 147, Liverpool L69 3BX,U.K.
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Abstract

The use of convergent beam electron diffraction patterns (CBPs) for investigating metal—semiconductor interfaces in plan—view samples is considered. It is shown that a wide—angle diffraction technique provides a sensitive method of measuring tetragonal distortions in NiSi 2/(001)Si bicrystals. A study of CBP symmetry and the detailec branch structure in higher order Laue zone rings has enabled the interfacial rigid body displacement in NiSi 2/(001)Si and Al/(001)GaAs films to be determined.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 145
Copyright
Copyright © Materials Research Society 1986

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References

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