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Diffusion Processes and Pre-Exponential Factors in Homo-Epitaxial Growth on Ag(100)

Published online by Cambridge University Press:  10 February 2011

Ulrike Kürpick  and
Talat S. Rahman
Ulrike Kürpick
Affiliation:
Department of Physics, Cardwell Hall, Kansas State University, Manhattan, Kansas 66506, USA
Talat S. Rahman
Affiliation:
Department of Physics, Cardwell Hall, Kansas State University, Manhattan, Kansas 66506, USA
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Abstract

We provide a recipe for the evaluation of pre–factors for various diffusion processes relevant to crystal growth on Ag(100), based on explicit calculations of appropriate vibrational density of states using realistic many-body interaction potentials. Our calculated diffusion coefficients show that while hopping processes are favored for terrace self-diffusion, exchange processes dominate step-edge diffusion. We also find the characteristics of adatom diffusion along the < 100 >-step-edge to be strikingly different from the < 110 >-step-edge with interesting consequences for interlayer transport on this surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 492: Symposium S – Microscopic Simulation of Interfacial Phenomena in Solids… , 1997 , 263
Copyright
Copyright © Materials Research Society 1998

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References

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