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Diffusion Studies of Cu in Si and Low-k Dielectric Materials

Published online by Cambridge University Press:  01 February 2011

K. Prasad ,
X.L. Yuan ,
C.M. Tan ,
D.H. Zhang ,
C.Y. Li ,
S.R. Wang ,
S.Y.J. Yuan ,
J.L. Xie ,
D. Gui  and
P.D. Foo
K. Prasad
Affiliation:
School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798.
X.L. Yuan
Affiliation:
School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798.
C.M. Tan
Affiliation:
School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798.
D.H. Zhang
Affiliation:
School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798.
C.Y. Li
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117684.
S.R. Wang
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117684.
S.Y.J. Yuan
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117684.
J.L. Xie
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117684.
D. Gui
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117684.
P.D. Foo
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117684.
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Abstract

Experimental results are presented on the diffusion of Cu in silicon and Black Diamond¶ (BD). Cu coated silicon samples, with and without the BD layer, are annealed at various temperatures and times. It is concluded that Cu diffusion in silicon is inhibited in the presence of a copper silicide formed during annealing and/or low solubility at temperatures less than 400°C. On the other hand, the incorporation of Cu in the BD film is observed to be strongly dependant on the method of deposition of the Cu layer. It is further concluded, based on device reliability data, that intentional backside Cu contamination does not pose serious device reliability problems even when subjected to annealing at temperatures typically used for backend processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B8.3
Copyright
Copyright © Materials Research Society 2002

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