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Dimensionally reduced heavy atom semiconductors as candidate materials for γ-ray detection: the case of Cs2Hg6S7

Published online by Cambridge University Press:  11 August 2011

Ioannis Androulakis ,
Hao Li ,
Christos Malliakas ,
John A. Peters ,
Zhifu Liu ,
Bruce W. Wessels ,
Jung-Hwan Song ,
Hosub Jin ,
Arthur J. Freeman  and
Mercouri G. Kanatzidis
Ioannis Androulakis
Affiliation:
Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
Hao Li
Affiliation:
Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
Christos Malliakas
Affiliation:
Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
John A. Peters
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
Zhifu Liu
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
Bruce W. Wessels
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA Department of Electrical Engineering, Northwestern University, Evanston, IL, 60208, USA
Jung-Hwan Song
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208, USA
Hosub Jin
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208, USA
Arthur J. Freeman
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208, USA
Mercouri G. Kanatzidis
Affiliation:
Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
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Abstract

We address the issue of decreasing band-gap with increasing atomic number, inherent in semiconducting materials, by introducing a concept we call dimensional reduction. The concept leads to semiconductor compounds containing high atomic number elements and simultaneously exhibiting a large band gap and high mass density suggesting that dimensional reduction can be successfully employed in developing new γ-ray detecting materials. As an example we discuss the compound Cs2Hg6S7 that exhibits a band-gap of 1.65eV and mobility-lifetime products comparable to those of optimized Cd0.9Zn0.1Te.

Keywords

chemical synthesisnuclear materialsradiation effects

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1341: Symposium U – Nuclear Radiation Detection Materials , 2011 , mrss11-1341-u04-06
Copyright
Copyright © Materials Research Society 2011

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References

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