Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-25T01:27:45.541Z Has data issue: false hasContentIssue false
  • English
  • Français

Direct Determination of the Stacking Order in Gd2O3 Epi-Layers on GaAs

Published online by Cambridge University Press:  11 February 2011

Yizhak Yacoby ,
Mukhles Sowwan ,
Ron Pindak ,
Julie Cross ,
Don Walko ,
Ed Stern ,
John Pitney ,
Robert MacHarrie ,
Minghwei Hong  and
Roy Clarke
Yizhak Yacoby
Affiliation:
Racah Institute of Physics, Hebrew University Jerusalem, Israel, 91904
Mukhles Sowwan
Affiliation:
Racah Institute of Physics, Hebrew University Jerusalem, Israel, 91904
Ron Pindak
Affiliation:
Brookhaven National Lab, NSLS, Bldg. 725D Upton, NY 11973–5000, U.S.A.
Julie Cross
Affiliation:
PNC-CAT, Advanced Photon Source, Argonne National Lab Argonne, IL, 60439, U.S.A.
Don Walko
Affiliation:
MHATT-CAT, Advanced Photon Source, Argonne National Lab Argonne, IL, 60439, U.S.A.
Ed Stern
Affiliation:
Department of Physics, University of Washington Seattle, WA 98195–1560, U.S.A.
John Pitney
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Ave. Murray Hill, NJ 07974, U.S.A.
Robert MacHarrie
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Ave. Murray Hill, NJ 07974, U.S.A.
Minghwei Hong
Affiliation:
Agere Systems, 700 Mountain Ave. Murray Hill, NJ 07974, U.S.A.
Roy Clarke
Affiliation:
Department of Physics, University of Michigan Ann Arbor, MI 48109–1120, U.S.A.
Get access

Abstract

We have used Coherent Bragg Rod Analysis (COBRA) to investigate the atomic structure of a 5.6 nm thick Gd2O3 film epitaxially grown on a (100) GaAs substrate. COBRA is a method to directly obtain the structure of systems periodic in two-dimensions by determining the complex scattering factors along the substrate Bragg rods. The system electron density and atomic structure are obtained by Fourier transforming the complex scattering factors into real space. The results show that the stacking order of the first seven Gd2O3 film layers resembles the stacking order of Ga and As layers in GaAs then changes to the stacking order of cubic bulk Gd2O3. This behavior is distinctly different from the measured stacking order in a 2.7 nm thick Gd2O3 in which the GaAs stacking order persists throughout the entire film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 751: Symposium Z – Structure-Property Relationships of Oxide Surfaces and Interfaces II , 2002 , Z4.5
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Yacoby, Y., Pindak, R., MacHarrie, R., Peiffer, L., Berman, L., and Clarke, R., Journal of Physics: Condensed Matter 12, 3929 (2000).Google Scholar
[2] Yacoby, Y., Sowwan, M., Stern, E., Cross, J., Brewer, D., Pindak, R., Pitney, J., Dufresne, E.B., and Clarke, R., Nature Materials 1, 99 (2002).Google Scholar
[3] Sowwan, M., Yacoby, Y., Pitney, J., MacHarrie, R., Hong, M., Cross, J., Walko, D.A., Clarke, R., Pindak, R., and Stern, E., Phys. Rev. B 66, 205311 (2002).Google Scholar
[4] Kortan, A.R., Hong, M., Kwo, J., Mannaerts, J.P., and Kopylov, N., Phys. Rev. B 60, 10913 (1999).Google Scholar
[5] Sicron, N., Ravel, B., Yacoby, Y., Stern, E., Dogan, F., and Rehr, J., Phys. Rev. B 50, 13168 (1994).Google Scholar
[6] Hong, M., Kwo, J., Kortan, A.R., Mannaerts, J.P., and Sergent, A.M., Science 283, 1897 (1999).Google Scholar