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Direct Formation of C54 Phase on the Basis of C40 TiSi2 and Its Applications in Deep Sub-Micron Technology

Published online by Cambridge University Press:  21 March 2011

S. Y. Chen ,
Z. X. Shen ,
S. Y. Xu ,
A. K. See ,
L. H. Chan  and
W. S. Li
S. Y. Chen
Affiliation:
Department of Physics, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
Z. X. Shen
Affiliation:
Department of Physics, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
S. Y. Xu
Affiliation:
Department of Physics, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
A. K. See
Affiliation:
Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406
L. H. Chan
Affiliation:
Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406
W. S. Li
Affiliation:
Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406
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Abstract

A simple and novel salicidation process applying pulsed laser annealing as the first annealing step was used to induce TiSi2 formation. Both Raman spectroscopy and transmission electron microscope results confirm the formation of a new phase of Ti disilicide, the pure C40 TiSi2 after laser irradiation. Direct C54 phase growth on the basis of C40 template bypassing the C49 phase is accomplished at the second annealing temperature as low as 600°C. Line width independent formation of the C54 phase was observed on patterned wafers using this salicidation process and “fine line effect” is thus eliminated.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001 , K6.4
Copyright
Copyright © Materials Research Society 2001

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References

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