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Direct Imaging of Ordering in Si-Ge Alloys, Ultrathin Superlattices, and Buried Ge Layers
Published online by Cambridge University Press: 22 February 2011
Abstract
We review recent Z-contrast imaging studies of Si-Ge ultrathin superlattices, alloys, and buried Ge layers. It is found that whenever Si is deposited onto a Ge (2 × 1) surface, Ge is pumped into the growing Si layer, and this is accompanied by interfacial ordering. This is explained by a novel Ge atom pump mechanism which occurs during MBE growth. Codeposition and alloy growth results in long range (111) ordering as a consequence of lateral segregation during nonequilibrium growth.
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- Research Article
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- Copyright © Materials Research Society 1991
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