Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-27T01:17:58.345Z Has data issue: false hasContentIssue false
  • English
  • Français

Direct Measurement of Ion Beam Induced, Nanoscale Roughening of GaN

Published online by Cambridge University Press:  01 February 2011

Bentao Cui ,
P. I. Cohen  and
A. M. Dabiran
Bentao Cui
Affiliation:
Department of Electrical and Computer Engineering University of Minnesota, Minneapolis, MN 55455
P. I. Cohen
Affiliation:
Department of Electrical and Computer Engineering University of Minnesota, Minneapolis, MN 55455
A. M. Dabiran
Affiliation:
SVT Associates, Inc, Eden Prairie, MN 55344
Get access

Abatract

The formation of ion induced nanoscale patterns such as ripple, dots or pores can be described by a linear continuum equation consisting of a surface roughening term due to curvature-dependent sputtering or asymmetric attachment of vacancies, and a surface smoothing term due to thermal or ion-induced diffusion. By studying ion-induced dimple volume change using atomic force microscopy, we show a method to measure the ion-roughening coefficient. Using this method, we found the roughening coefficient í was 45 nm2/sec at 730K for initial ion etchings with 300 eV Argon ions. Cathodoluminescence measurements indicated Ga-vacancy formation during ion bombardment. The activation energy for surface relaxation after ion etching was about 0.12 eV as measured by reflection high energy electron diffraction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E4.37
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Makeev, M. A. and Barabasi, A.-L., Appl. Phys. Lett. 71, 2800 (1997).Google Scholar
2 Kim, J., Cahill, D. G., and Averback, R. S., Phys. Rev. B 67, 45404 (2003).Google Scholar
3 Chan, W. L., Ashwin, R., Shenoy, V., and Chason, E., Phys. Rev. B, 70, 245403 (2004).Google Scholar
4 Erlebacher, J., Aziz, M. J., Chason, E., Sinclair, M. B., and Floro, J. A., J. Vac. Sci. Technol. A 18, 115 (2000).Google Scholar
5 Bradley, R. M. and Harper, J. M. E., J. Vac. Sci. Technol. A 6, 2390 (1988).Google Scholar
6 Chan, W. L., Niravun, P., and Chason, E., Phys. Rev. B, 69, 245413 (2004).Google Scholar
7 Cui, B., Cohen, P. I., and Dabiran, A. M., J. Appl. Phys., 97, in press (2005).Google Scholar
8 Parkomovsky, A., Dabiran, A. M., Benjaminsson, B., and Cohen, P. I., Appl. Phys. Lett. 78, 2315 (2001).Google Scholar
9 Hansen, H., Polop, C., Michely, T., Friedrich, A., and Urbassek, H. M., 92, 246106 (2004).Google Scholar
10 Ichimiya, A. and Cohen, P. I., Reflection High-Energy Electron Diffraction (Cambridge University Press, 2004).Google Scholar
11 Held, R., Nowak, G., Ishaug, B. E., Seutter, S. M., Parkhomovsky, A., Dabiran, A. M., Cohen, P. I., Grzegory, I., and Porowski, S., J. Appl. Phys., 85, 7697 (1999).Google Scholar
12 Neugebauer, J., Zywietz, T., Scheffler, M., and Northrup, J., Appl. Surf. Sci. 159, 355 (2000).Google Scholar
13 Walle, C. G. Van de and Neugebauer, J., J. of Appl. Phys. 95, 3851 (2004).Google Scholar