Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-28T20:30:29.633Z Has data issue: false hasContentIssue false
  • English
  • Français

Direct Silicidation of Co on Si by Rapid Thermal Annealing

Published online by Cambridge University Press:  26 February 2011

M. Tabasky ,
E. S. Bulat ,
B. M. Ditchek ,
M. A. Sullivan  and
S. Shatas
M. Tabasky
Affiliation:
GTE Laboratories, Inc, 40 Sylvan Rd, Waltham Ma, 02254
E. S. Bulat
Affiliation:
GTE Laboratories, Inc, 40 Sylvan Rd, Waltham Ma, 02254
B. M. Ditchek
Affiliation:
GTE Laboratories, Inc, 40 Sylvan Rd, Waltham Ma, 02254
M. A. Sullivan
Affiliation:
GTE Laboratories, Inc, 40 Sylvan Rd, Waltham Ma, 02254
S. Shatas
Affiliation:
Peak Systems, Inc., 4258 Solar Way, Fremont, Ca., 94538
Get access

Abstract

Rapid thermal annealing is used to form cobalt silicide directly on unimplanted as well as B, As, and P implanted wafers. The films are characterized by sheet resistance, X-ray diffraction, SEM, SIMS, and contact resistance measurements. The direct silicidation of cobalt on Si by rapid thermal annealing yields smooth, low resistivity films with minimal dopant redistribution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 271
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nicolet, M.A. and Lau, S.S., in VLSI Electronics, edited by Einspruch, N.G. and Larrabee, G.B. (Academic Press, N.Y., 1983) p. 330.Google Scholar
2. Ditchek, B.M., J. Cryst. Growth, 69, 207 (1984).CrossRefGoogle Scholar
3. Murarka, S.P., Silicides for VLSI Applications, (Academic Press, New York, 1983), p. 93.Google Scholar
4. Bean, J.C. and Poate, J.M., Appl. Phys. Lett., 37, 643 (1980).CrossRefGoogle Scholar
5. Hensel, J.C., Levi, A.F.J., Tung, R.T., Gibson, J.M., Appl. Phys. Lett., 47, 151 (1985).CrossRefGoogle Scholar
6. Hensel, J.C., Tung, R.T., Poate, J.M. and Unterwald, F.C., Appl. Phys. Lett., 44, 913 (1984).CrossRefGoogle Scholar
7. BrTiTlson, L.J., Slade, M.L., Richter, H.W., Plas, H. Vander, R.T. Fulks, Appl. Phys. Lett., 47, 1080 (1985).Google Scholar
8. Haken, R.A., “CoevaprTated and Self-Aligned Titanium Disilicide Films for Low Resistivity Gates and Interconnects.” Workshop on Refractory Metal Silicides, San Juan Batista, California, September 1983.Google Scholar
9. Proctor, S.J. and Linholm, L.W., IEEE Electr. Dev. Lett., EDL3, (10), p. 294 (1982).CrossRefGoogle Scholar