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Dislocation Arrays in the Interfaces between Substrates and Epitaxial Islands

Published online by Cambridge University Press:  21 March 2011

Annamalai Lakshmanan
Affiliation:
Now at Applied Materials, Inc., Santa Clara, CA
Vidyut Gopal
Affiliation:
Now at Applied Materials, Inc., Santa Clara, CA
Alexander H. King
Affiliation:
School of Materials EngineeringPurdue University, West Lafayette IN 47907-1289
Eric P. Kvam
Affiliation:
School of Materials EngineeringPurdue University, West Lafayette IN 47907-1289
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Abstract

We present a model for dislocation array image effects during epilayer island growth. Misfit dislocations often appear at an interface between phases, to accommodate a lattice mismatch. In many situations, such as early film growth, one of the phases may be discontinuous, leaving the interface region clearly bounded. The structure of such a finite interface differs from the normally-modeled infinite boundary because of end effects near the edges of the islands. We have modeled the dislocation structure of such a finite interface in MBE-grown InAs islands on GaP, and compare our results to high-resolution images of the same structure. The 11% misfit causes dislocation introduction from the outset of growth. Islands containing between 4 and 14 dislocations were examined, and dislocation spacings were found to be enlarged near the island perimeters. The model provides a clear understanding of this and other effects.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Gopal, V., Vasiliev, A.L. and Kvam, E.P., Philos. Mag. A (in press).Google Scholar
2. Lakshmanan, A. and King, A.H., in Multiscale Modeling of Materials, Eds. Rubia, T.D. de la, Kaxiras, T., Bulatov, V., Ghoniem, N.M. and Phillips, R. P.; MRS Symp. Ser. 538 (2000) 407412 Google Scholar
3. Lakshmanan, A., Ph.D. Dissertation, SUNY Stony Brook, 2000.Google Scholar