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Dislocation Nucleation Models From Point Defect Condensations in Silicon and Germanium

Published online by Cambridge University Press:  15 February 2011

T.Y. Tan
T.Y. Tan*
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
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Abstract

The process of dislocation nucleation from point defect condensations in Si(Ge) is discussed. Based on the assumption that during the dislocation nucleation stage, the dominant factor in the configurational energy is the number of dangling bonds per point defect incorporated, rather than the more commonly recognized factor of strain energy, it is possible to model the dislocation nucleation process. In order to minimize the number of dangling bonds, point defects would condense into row configurations elongated in <110>, called intermediate defects (IDC), and then the IDCs would evolute into undissociated 90° edge –, 60°, and Frank partial dislocations.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 163
Copyright
Copyright © Materials Research Society 1981

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References

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