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Dislocations in InAs Epilayers Grown by MBE on GaAs Substrates Under Various Conditions

Published online by Cambridge University Press:  10 February 2011

Hongmei Wang ,
Yiping Zeng ,
Liang Pan ,
Hongwei Zhou ,
Zhanping Zhu  and
Meiying Kong
Hongmei Wang
Affiliation:
Division of Novel Materials, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box 912, Beijing 100083, P.R.China
Yiping Zeng
Affiliation:
Division of Novel Materials, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box 912, Beijing 100083, P.R.China
Liang Pan
Affiliation:
Division of Novel Materials, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box 912, Beijing 100083, P.R.China
Hongwei Zhou
Affiliation:
Division of Novel Materials, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box 912, Beijing 100083, P.R.China
Zhanping Zhu
Affiliation:
Division of Novel Materials, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box 912, Beijing 100083, P.R.China
Meiying Kong
Affiliation:
Division of Novel Materials, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box 912, Beijing 100083, P.R.China
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Abstract

Using Transmission Electron Microscopy, we studied the misfit and threading dislocations in InAs epilayers. All the samples, with thickness around 0.5μm, were grown on GaAs(001) substrates by molecular beam epitaxy under As-rich or In-rich conditions. The As-rich growth undergoes 2D-3D mode transition process, which was inhibited under In-rich surface. High step formation energy under As-deficient reconstruction inhibits the formation of 3D islands and leads to 2D growth. The mechanism of misfit dislocations formation was different under different growth condition which caused the variation of threading dislocation density in the epilayers.

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