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Dislocation-Solute Interactions at Twin Boundaries in Dendritic Web Silicon

Published online by Cambridge University Press:  26 February 2011

R. Jayaram ,
J. A. Spitznagel ,
D. L. Meier ,
J. Greggi  and
M. Burke
R. Jayaram
Affiliation:
University of Pittsburgh, Pittsburgh, PA 15260
J. A. Spitznagel
Affiliation:
University of Pittsburgh, Pittsburgh, PA 15260 Westinghouse R&D Center, Pittsburgh, PA 15235
D. L. Meier
Affiliation:
Westinghouse R&D Center, Pittsburgh, PA 15235
J. Greggi
Affiliation:
Westinghouse R&D Center, Pittsburgh, PA 15235
M. Burke
Affiliation:
University of Pittsburgh, Pittsburgh, PA 15260
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Abstract

DLTS, TEM and APFIM techniques have been used to study impurity-defect interactions responsible for reducing minority carrier diffusion lengths in solar cells of dendritic web silicon. Fine scale precipitates of SiOx, which decorate dislocations piled up at the twin planes in low eff clency cells, appear to be the dominant recombination centers.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 271
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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