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Displacement Current Measurement of MIS Devices with IonicLiquids to Explore Carrier Behaviors in Model Interfaces of OrganicDevices

Published online by Cambridge University Press:  14 January 2011

Taiki Yamada ,
Yutaka Noguchi ,
Yukio Ouchi  and
Hisao Ishii
Taiki Yamada
Affiliation:
Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
Yutaka Noguchi
Affiliation:
Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan. Center for Frontier Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
Yukio Ouchi
Affiliation:
Department of Chemistry, Graduate School of Science, Nagoya University, Furo-cho, Chikusaku, Nagoya 464-8602, Japan.
Hisao Ishii
Affiliation:
Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan. Center for Frontier Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
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Abstract

Charge injection property of organic thin film devices is a key issue tounderstand the device operation. Displacement current measurement (DCM) is apowerful technique to probe the charge injection behaviors in terms of achange in the apparent capacitance of test devices. However, it requires tosuppress actual current flowing through the device for investigating thedetails of interface phenomena. We propose here the use of ionic liquids(ILs) as a top contact insulator in organic metal-insulator-semiconductor(MIS) structures. Because of the high stability and dielectric constant ofthe ILs, the external applied voltage was applied mainly to the organiclayer with suppressing the actual current. The DCM curves of Ptwire/IL/α-NPD/ITO structure were measured, and they actually show thesignals due to the hole injection from theITO to α-NPD layer andaccumulation at the IL/α-NPD.

Keywords

insulatordeviceselectrical properties

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1286: Symposium E – Molecular and Hybrid Materials for Electronics and Photonics , 2011 , mrsf10-1286-e03-39
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Malliaras, G. and Friend, R., Phys. Today 58(5), 53 (2005).Google Scholar
2. Ogawa, S., Kimura, Y., Ishii, H., Niwano, M., Jpn. J. Appl. Phys. 42, L1275–L1278 (2003)Google Scholar
3. Noguchi, Y., Sato, N., Tanaka, Y., Nakayama, Y., Ishii, H., Appl. Phys. Lett. 92, 203306 (2008)Google Scholar
4. Ono, S., Miwa, K., Seki, S., and Takeya, J., Appl. Phys. Lett 94, 063301 (2009)Google Scholar
5. Seki, S., Kobayashi, Y., Miyashiro, H., Ohno, Y., Usami, A., Mita, Y., Kihira, N., Watanabe, M., and Terada, N., J. Phys. Chem. B 110, 10228 (2006)Google Scholar
6. Armand, M., Endres, F., MacFarlane, D. R., Ohno, H. and Scrosati, B., Nat. Mater. 8, 621 (2009)Google Scholar