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Ion Beam-Assisted Deposition of Boron Nitride from a Condensed Layer of Diborane and Ammonia at 78 K

Published online by Cambridge University Press:  22 February 2011

R. J. Kroczynski ,
D. R. Strongin ,
M. W. Ruckman  and
M. Strongin
R. J. Kroczynski
Affiliation:
The State University of New York at Stony Brook, Department of Chemistry, Stony Brook, New York 11794
D. R. Strongin
Affiliation:
The State University of New York at Stony Brook, Department of Chemistry, Stony Brook, New York 11794
M. W. Ruckman
Affiliation:
Physics Department, Brookhaven National Laboratory, Upton New York 11973
M. Strongin
Affiliation:
Physics Department, Brookhaven National Laboratory, Upton New York 11973
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Abstract

This paper examines the ion beam-assisted deposition (IBAD) of thin boron nitride films using cryogenically condensed precursors. Low energy (1100 eV) argon and (2000 eV) deuterated ammonia beams with currents of 600-850 nA were used to mix and initiate reactions in frozen (90 K) layers of diborane (B2H6) and ammonia (NH3) or only B2H6, respectively. The resulting film is shown to be an amorphous BN coating approximately 30 Å thick.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 869
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Arya, P.S. and D’mico, M., Thin Solid Films, 157, 267, (1988)Google Scholar
2 Kester, D.J., Ailey, K.S., and Davis, R.F., J. Mater. Res., 6, 1213, (1993)Google Scholar
3 Pilyankevich, A.N. and Claussen, Nils, Mat. Res. Bull., 13, 413, (1978)Google Scholar
4 Nakamura, Katsumitsu, J. Electrochem. Soc., 132, 1757, (1985)Google Scholar
5 Strongin, D.R., Mowlem, J.K., Ruckman, M.W., and Strongin, M., Appl. Phys. Lett., 60, 2561, (1992)Google Scholar
6 Strongin, D.R., Moore, J.F., Ruckman, M.W., and Strongin, M., Mat. Res. Symp. Proc. Vol 282, 631, (1993)Google Scholar
7 “Handbook of X-ray Pho toelectron Spectroscopy”, Perkin-Elmer Corporation, (1978)Google Scholar
8 Tanabe, N. and Iwaki, M, Nucl. Instr. and Meth B, 80/81, 1349, (1993)Google Scholar
9 Rother, B., Zscheile, H.D., Weissmantel, C., Heiser, C., Holzhüter, G., Leonhardt, G., Reich, P., Thin Solid Films, 142, 83, (1986)Google Scholar
10 Kester, D.J. and Messier, R., J. Appl. Phys., 72, 504, (1992)Google Scholar
11 Simons, R.J., Paffet, M.T., Jones, M.E., and Koel, B.E., Surface Science, 29, 254, (1991)Google Scholar
12 Levy, R.A., Resnick, D.J., Frye, R.C., and Yanof, A.W., J. Vac. Sci. Technol., B6, 154, (1988)Google Scholar
13 see Ref. 5Google Scholar
14 Ruckman, M.W., Mowlem, J.K., Moore, J.F., Strongin, D.R., and Strongin, M., Mat. Res. Soc. Symp. Proc. Vol. 279, 651, (1993)Google Scholar