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Nonlinear optical properties related to intersubband transitions in asymmetrical double δ-doped GaAs; effects of an applied electric field

Published online by Cambridge University Press:  11 January 2013

K. A. Rodríguez-Magdaleno
Affiliation:
Unidad Académica de Física. Universidad Autónoma de Zacatecas. Calzada Solidaridad esquina con Paseo a La Bufa S/N. C.P. 98060, Zacatecas, Zacatecas. México
J. C. Martínez-Orozco
Affiliation:
Unidad Académica de Física. Universidad Autónoma de Zacatecas. Calzada Solidaridad esquina con Paseo a La Bufa S/N. C.P. 98060, Zacatecas, Zacatecas. México
I. Rodríguez-Vargas
Affiliation:
Unidad Académica de Física. Universidad Autónoma de Zacatecas. Calzada Solidaridad esquina con Paseo a La Bufa S/N. C.P. 98060, Zacatecas, Zacatecas. México
M. E. Mora-Ramos
Affiliation:
Facultad de Ciencias. Universidad Autónoma del Estado de Morelos. Ave. Universidad 1001, C.P. 62209, Cuernavaca, Morelos, México Instituto de Física, Universidad de Antioquia, AA 1226, Medellín, Colombia
C.A. Duque
Affiliation:
Instituto de Física, Universidad de Antioquia, AA 1226, Medellín, Colombia
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Abstract

In this work, we calculated the ground and first excited states of an electron confined in an asymmetric double DDQW system within a Gallium Arsenide (GaAs) matrix. The two-dimensional impurities density (N2d) considered in our calculation are within the range of 1012 to 1013 cm−2. We obtain the linear and nonlinear optical properties related to intersubband transitions as a function of the spacing between δ-doped wells, two-dimensional impurities concentrations as well as in presence of electric field. We reported results for the linear and nonlinear optical absorption coefficient and in the relative refractive index changes. Our results show that the asymmetry induced in the double δ-doped well system gives rise to values that are several orders of magnitude higher in the resonant peaks intensity.

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Articles
Copyright
Copyright © Materials Research Society 2012

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References

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