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Dual Electron Beam Processing System for Semiconductor Materials

Published online by Cambridge University Press:  15 February 2011

R.A. McMahon ,
J.R. Davis  and
H. Ahmed
R.A. McMahon
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, England, CB2 1PZ
J.R. Davis
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, England, CB2 1PZ
H. Ahmed
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, England, CB2 1PZ
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Abstract

This paper describes a semiconductor processing system using two electron beams. One beam provides uniform heating of the bulk of the specimen, whilst the other performs localized heating, for example as a spot, a line beam, or as an inset scan. The annealing of localized regions in ion-implanted silicon and SOS, by local heating above the bulk temperature, illustrates the application of the system. Other applications of the systems are also considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 783
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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